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mga-637p8 high linearity low noise amplifi er data sheet attention: observe precautions for handling electrostatic sensitive devices. esd machine model = 80 v esd human body model = 350 v refer to avago application note a004r: electrostatic discharge, damage and control. description avago technologies mga-637p8 is an economical, easy- to-use gaas mmic low noise amplifi er (lna). this lna has low noise and high linearity achieved through the use of avago technologies proprietary 0.25 ? m gaas enhancement-mode phemt process. it is housed in the miniature 2.0 x 2.0 x 0.75 mm 3 8-pin dual-flat-non-lead (dfn) package. the device is designed for optimum use from 1.5 ghz up to 2.5 ghz. the compact footprint and low profi le coupled with low noise, high gain and high linearity make this an ideal choice as a low noise amplifi er for cellular infrastructure applications such as lte, gsm, cdma, w-cdma, cdma2000 & td-scdma. for optimum performance at lower frequency from 450 mhz up to 1.5 ghz, mga-636p8 is recommended. for optimum performance at higher frequency from 2.5 ghz up to 4 ghz, mga-638p8 is recommended. all these 3 products, mga-636p8, mga-637p8 and mga-638p8 share the same package and pinout confi guration. pin confi guration and package marking 2.0 x 2.0 x 0.75 mm 3 8-lead dfn features ?? high linearity performance. ?? low noise figure. ?? gaas e-phemt technology [1] . ?? low cost small package size. ?? integrated with active bias and option to access fet gate. ?? integrated power down control pin. specifi cations 1.7 ghz; 4.8 v, 75 ma ?? 17.3 db gain ?? 0.52 db noise figure ?? 11 db input return loss ?? ? 22.5 dbm input ip3 ?? ? 21.9 dbm output power at 1 db gain compression applications ?? cellular infrastructure applications such as lte, gsm, cdma, w-cdma, cdma2000 & td-scdma. ?? other low noise applications. note: 1. enhancement mode technology employs positive vgs, thereby eliminating the need of negative gate voltage associated with con- ventional depletion mode devices. top view bottom view [2] [1] [3] [4] [7] [8] [6] [5] 37x [2] [1] [3] [4] [7] [8] [6] [5] gnd pin 1 C not used pin 5 C vbias1 pin 2 C rfinput pin 6 C pwrdwn pin 3 C vbias2 pin 7 C rfoutput pin 4 C not used pin 8 C not used center paddle C gnd note: package marking provides orientation and identifi cation 37 = product code x = month code it is recommended to ground pin1, 4 and 8 which are not used.
2 simplifi ed schematic [1] note: 1. device is turned on when pwrdwn pin is applied with 0v or left open. device is turned off when pwrdwn pin is applied with 3.3 v absolute maximum rating [1] t a =25 c symbol parameter units absolute maximum v dd device voltage, rf output to ground v 5.5 i dd drain current ma 125 vbias1 bias voltage v 5.5 v pwrdwn power down voltage v 5.5 p in,max cw rf input power dbm +24 p diss total power dissipation w 0.6 t j junction temperature c 150 t stg storage temperature c -65 to 150 thermal resistance thermal resistance [2] (v dd = 4.8 v, i dd = 75 ma) ? jc = 56.3c/w notes: 1. operation of this device in excess of any of these limits may cause permanent damage. 2. thermal resistance measured using infra-red measurement technique. 3. power dissipation with unit turned on. board temperature t c is 25 c. derate at 17.8 mw/c for t c > 115.9 c. rfin bias rfout l2 l1 r1 c2 [5] [vbias1] [6] [pwrdwn] [7] [rfoutput] [8] [nu] [4] [nu] [3] [vbias2] [2] [rfinput] [1] [nu] r2 c6 c7 c3 c4 c5 rb c1 l3 vbias1 c8 pwrdwn vdd
3 electrical specifi cations [1, 4] t a = 25 c, vdd = vbias1 = 4.8 v, rf measurement at 1.7 ghz, measured on demo board in figure 5 with component listed in table1. symbol parameter and test condition units min. typ. max. idd bias current ma 59 75 101 i pwrdwn current at v pwrdwn pin when v pwrdwn = 3.3 v (power down mode) ma C 0.15 C gain gain db 16 17.3 19 nf [2] noise figure db C 0.52 0.75 iip3 [3] input third order intercept point dbm 21 22.5 C op1db output power at 1db gain compression dbm C 21.9 C irl input return loss, 50 ? source db C 13 C orl output return loss, 50 ? load db C 15.8 C notes: 1. measurements at 1.7 ghz obtained using demo board described in figure 5. 2. for nf data, board losses of the input have not been de-embedded. 3. iip3 test condition: f rf1 = 1.700 ghz, f rf2 = 1.701 ghz with input power of -10 dbm per tone. 4. use proper bias, heatsink and derating to ensure maximum channel temperature is not exceeded. see absolute maximum ratings a nd application note for more details. product consistency distribution charts [1, 2] figure 1. idd, lsl = 59 ma , nominal = 75 ma, usl = 101 ma figure 2. nf, nominal = 0.52 db, usl = 0.75 db figure 3. iip3, lsl = 21 dbm, nominal = 22.5 dbm figure 4. gain, lsl = 16 db, nominal = 17.3 db, usl = 19 db notes: 1. distribution data sample size is 500 samples taken from 3 diff erent wafer lots. future wafers allocated to this product may have nominal values anywhere between the upper and lower limits. 2. circuit trace losses have not been de-embedded from measurements above. lsl usl usl 0.4 0.5 0.6 0.7 0.8 50 60 80 90 100 70 lsl 21 22 24 23 lsl usl 16 17 18 19
4 demo board layout figure 5. demo board layout diagram demo board schematic figure 6. demo board schematic diagram table 1. component list for 1.7 ghz matching part size value detail part number c1 0402 100 pf (murata) grm1555c1h101jd01d c2 0402 150 pf (murata) grm1555c1h151jd01d c5, c6, c7, c8 0603 4.7 ? f (murata) grm188r60j475ke19d c3, c4 0402 not used l1, l2 0402 8.2 nh (toko) llp1005-fh8n2c l3 0402 not used rb 0402 750 ohm (rohm) mcr004yzpj751 r1, r2 0402 0 ohm (rohm) mcr01mzpj000 notes: c1, c2 are dc blocking capacitors l1 input match for nf l2 output match for ip3 c5, c6, c7, c8 are bypass capacitors rb is the biasing resistor C recommended pcb material is 10 mils rogers ro4350. C suggested component values may vary according to layout and pcb material. notes: ? the schematic is shown with the assumption that similar pcb is used for all mga-636p8, mga-637p8 and mga-638p8. ? detail of the components needed for this product is shown in table 1. truth table v pwrdwn (v) lna mode 0 or open power down mode 3.3 rb c7 c4 c6 c8 c5 r1 c3 l2 l1 vdd pwrdwn vbias1 avago technologies bts lna nov 2010 rfin rfout c1 c2 l3 rfin bias rfout l2 l1 r1 c2 [5] [vbias1] [6] [pwrdwn] [7] [rfoutput] [8] [nu] [4] [nu] [3] [vbias2] [2] [rfinput] [1] [nu] r2 c6 c7 c3 c4 c5 rb c1 l3 vbias1 c8 pwrdwn vdd
5 typical performance rf performance at t a = 25 c, vdd = 4.8 v, idd = 75 ma, measured using 50 ohm input and output board unless stated otherwise. iip3 test condition: f rf1 -f rf2 = 1 mhz with input power of -10 dbm per tone. figure 7. fmin vs idd at 4.8 v at 1.7 ghz figure 8. fmin vs idd at 4.8 v at 1.9 ghz figure 9. gain vs idd at 4.8 v tuned for optimum iip3 and fmin at 1.7 ghz figure 10. gain vs idd at 4.8 v tuned for optimum iip3 and fmin at 1.9 ghz figure 11. iip3 vs idd at 4.8 v tuned for optimum iip3 and fmin at 1.7 ghz figure 12. iip3 vs idd at 4.8 v tuned for optimum iip 3 and fmin at 1.9 ghz 0.3 0.4 0.5 0.6 0.7 55 65 75 85 95 idd (ma) fmin (db) 0.3 0.4 0.5 0.6 0.7 55 65 75 85 95 idd (ma) fmin (db) 0 2 4 6 8 10 12 14 16 18 20 22 55 65 75 85 95 idd (ma) gain(db) 0 2 4 6 8 10 12 14 16 18 20 22 55 65 75 85 95 idd (ma) gain(db) 20 21 22 23 24 25 26 27 28 29 30 55 65 75 85 95 idd (ma) iip3 (dbm) 20 21 22 23 24 25 26 27 28 29 30 55 65 75 85 95 idd (ma) iip3 (dbm)
6 figure 13. fmin vs frequency and idd at 4.8 v figure 14. gain vs frequency for optimum iip3 and fmin at 4.8 v 75 ma figure 15. iip3 vs frequency for optimum iip3 and fmin at 4.8 v 75 ma 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 1.5 1.7 1.9 2 2.2 2.5 frequency (ghz) fmin (db) 6 8 10 12 14 16 18 20 22 1.5 1.7 1.9 2 2.2 2.5 frequency (ghz) gain (db) 16 18 20 22 24 26 28 30 1.5 1.7 1.9 2 2.2 2.5 frequency (ghz) iip3 (dbm) 85 ma 75 ma 65 ma
7 figure 16. rfinput and rfoutput reference plane below is the table showing the mga-637p8 refl ection coeffi cient parameters tuned for maximum iip3, vdd = 4.8 v, idd = 75 ma. frequency (ghz) gamma load position iip3 (dbm) magnitude angle 1.5 0.27 99.9 25.3 1.7 0.27 100 26 1.9 0.27 119.9 27.2 2.0 0.27 120 28 2.2 0.36 129.7 28.7 2.5 0.36 143.9 30.2 notes: 1. the maximum iip3 values are calculated based on load pull measure- ments on approximately 100 diff erent impedances using focus load pull test system. 2. measurements are conducted on 0.010 inch thick roger 4350. the input reference plane is at the end of the rfin pin and the output reference plane is at the end of the rfout pin as shown in figure 16. rfinput reference plane rfoutput reference plane [2] [rfinput] [1] [nu] [3] [vbias2] [4] [nu] [7] [rfoutput] [8] [nu] [6] [pwrdwn] [5] [vbias1] bias
8 typical performance rf performance at t a = 25 c, vdd = vbias1 = 4.8 v, idd = 75 ma, lna mode, measured on demo board in figure 5. signal = cw unless stated otherwise. application test circuit is shown in figure 6 and table 1. iip3 test condition: f rf1 -f rf2 = 1 mhz with input power of -10 dbm per tone. figure 17. nf vs frequency vs temperature figure 18. gain vs frequency vs temperature figure 19. iip3 vs frequency vs temperature figure 20. op1db vs frequency vs temperature 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 1.5 1.7 1.9 2.1 2.3 2.5 2.7 2.9 3.1 frequency (ghz) nf (db) 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 frequency (ghz) gain (db) 10 12 14 16 18 20 22 24 26 28 30 frequency (ghz) iip3 (dbm) 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 85 c 25 c -40 c 85 c 25 c -40 c 85 c 25 c -40 c 16 17 18 19 20 21 22 23 24 25 op1db(dbm) frequency (ghz) 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 85 c 25 c -40 c
9 figure 21. input return loss, output return loss, gain, reverse isolation vs frequency figure 22. k-factor vs frequency vs temperature figure 23. idd vs rb figure 24. idd vs v pwrdwn 0 20 40 60 80 100 120 0 500 1000 1500 2000 2500 3000 rb (ohm) idd (ma) 0 10 20 30 40 50 60 70 80 0.0 1.0 2.0 3.0 4.0 v pwrdwn (v) idd (ma) 85 c 25 c -40 c frequency (ghz) 1.5 2.0 2.5 3.0 3.5 4.0 -30 -25 -20 -15 -10 -5 0 5 10 15 20 -35 25 db(s(2,1)) db(s(1,1)) db(s(2,2)) db(s(1,2)) 02468101214161820 0.5 1.0 1.5 2.0 2.5 0.0 3.0 frequency (ghz) k-factor 100 c 85 c 25 c -40 c
10 typical scattering parameters, vdd = 4.8 v, idd = 75 ma lna spar (100 mhz C 20 ghz) freq (ghz) s11 (db) s11 (ang) s21 (db) s21 (ang) s12 (db) s12 (ang) s22 (db) s22 (ang) 0.1 -0.329 -22.999 33.852 148.157 -48.343 89.846 -3.56 -28.96 0.5 -5.991 -75.335 26.793 101.778 -37.553 68.482 -9.343 -42.722 0.7 -7.885 -88.201 24.381 90.298 -35.261 67.398 -10.033 -45.831 0.9 -9.209 -98.163 22.444 81.171 -33.47 66.028 -10.32 -49.973 1.0 -9.702 -101.134 21.599 77.242 -32.687 65.327 -10.275 -51.379 1.5 -11.151 -116.34 18.278 59.797 -29.648 61.018 -10.152 -63.539 1.7 -11.276 -122.907 17.226 53.244 -28.7 58.653 -10.128 -70.304 1.9 -11.28 -128.572 16.273 46.935 -27.88 56.39 -10.016 -77.005 2.0 -11.229 -131.135 15.822 43.855 -27.484 55.174 -9.922 -80.341 2.5 -10.769 -141.135 13.846 29.093 -25.85 49.214 -9.277 -96.744 3 -10.175 -148.444 12.169 15.07 -24.576 43.459 -8.47 -110.824 3.5 -9.562 -154.544 10.721 1.694 -23.511 37.989 -7.648 -122.637 4 -8.981 -159.914 9.465 -10.717 -22.487 33.134 -6.837 -133.403 4.5 -8.422 -166.312 8.43 -23.396 -21.619 27.803 -6.326 -143.965 5 -7.886 -174.086 7.427 -36.283 -20.85 22.415 -5.792 -154.912 5.5 -7.37 176.754 6.479 -49.17 -20.128 17.017 -5.329 -166.087 6 -6.889 166.657 5.61 -62.254 -19.395 11.192 -4.972 -177.579 7 -5.56 147.502 3.617 -88.076 -18.321 -1.075 -4.149 160.414 8 -4.329 135.731 1.376 -110.949 -17.688 -11.478 -3.34 143.283 9 -3.729 126.937 -0.866 -131.216 -16.886 -19.591 -3.081 130.105 10 -3.502 113.258 -2.61 -152.59 -15.681 -30.852 -2.366 113.034 11 -3.208 97.368 -4.934 -177.297 -14.905 -46.367 -2.241 88.557 12 -3.079 83.346 -7.811 158.326 -14.427 -62.459 -1.971 64.563 13 -3.133 68.38 -11.487 136.173 -14.497 -77.811 -1.813 46.387 14 -3.002 54.811 -15.566 121.173 -14.455 -87.355 -2.709 36.535 15 -2.865 48.736 -18.501 113.896 -13.135 -90.676 -3.722 50.249 16 -3.111 45.795 -24.606 83.96 -12.225 -107.4 -2.615 28.754 17 -3.355 38.022 -39.471 -2.18 -12.552 -124.888 -2.917 0.394 18 -3.245 27.651 -28.848 -107.903 -12.801 -138.791 -3.083 -12.005 19 -3.219 14.019 -24.346 -130.67 -13.289 -153.698 -2.647 -13.451 20 -3.289 -1.387 -21.594 -148.155 -13.144 -167.611 -2.637 -8.352 figure 25. rfinput and rfoutput reference plane rfinput reference plane rfoutput reference plane [2] [rfinput] [1] [nu] [3] [vbias2] [4] [nu] [7] [rfoutput] [8] [nu] [6] [pwrdwn] [5] [vbias1] bias
11 dfn2x2 package dimensions notes: 1. all dimensions are in millimeters. 2. dimensions are inclusive of plating. 3. dimensions are exclusive of mold ash and metal burr. part number ordering information part number no. of devices container MGA-637P8-BLKG 100 antistatic bag mga-637p8-tr1g 3000 7 inch reel typical noise parameters, vdd = 4.8 v, idd = 75 ma freq ghz fmin db ? opt mag. ? opt ang. r n/50 1.5 0.48 0.129 142.7 0.041 1.7 0.51 0.151 151.5 0.041 1.9 0.53 0.174 160.3 0.038 2 0.54 0.185 164.7 0.037 2.2 0.58 0.207 173.5 0.037 2.5 0.75 0.241 186.6 0.048 notes: 1. the fmin values are based on noise fi gure measurements at 100 diff erent impedances using focus source pull test system. from these measurements a true fmin is calculated. 2. scattering and noise parameters are measured on coplanar waveguide made on 0.010 inch thick roger 4350. the input reference plane is at the end of the rfinput pin and the output reference plane is at the end of the rfoutput pin as shown in figure 25. p i n 1 do t b y mar ki ng 2.00 0. 1 0 2.00 0. 1 0 37 x 0.20 ref. 0.0 C 0.05 0.75 0. 1 0 0.60 0.05 ex p. dap 0.35 0.05 0.25 0.05 1 .20 0.05 ex p. dap 1 .50 ref. 0.50 bsc p i n #1 i d e n tifi ca ti on r0. 1 0 t op view s i d e view bo tt om view
12 recommended pcb land pattern and stencil design pcb land pattern stencil design combines pcb & stencil design all dimension are in millimeters 0.50?6x 0.25?8x r0.15?4x 0.45?8x 0.30?3x 0.50?2x 1.20 1.50 0.50 0.05 (all sm gaps) 2.20 1.75 0.00 0.80 0.50?6x 0.22?8x 0.40?8x 0.170?2x 0.48?2x 0.21 1.50 1.72 2.16 1.75 0.56?3x 0.50?6x r0.15?4x 0.17?2x 0.50 1.50 0.21 1.75 0.56?3x metal surface soldermask open notes: 1. stencil thickness is 0.1 mm (4 mils). 2. all dimensions are in mm unless otherwise specifi ed.
13 tape dimensions 10 max ++ 10 max a o b o t 1 t t k o d 1 f e p 2 p o p d w description symbol size (mm) size (inches) length width depth pitch bottom hole diameter a 0 b 0 k 0 p d 1 2.30 0.05 2.30 0.05 1.00 0.05 4.00 0.10 1.00 + 0.25 0.091 0.004 0.091 0.004 0.039 0.002 0.157 0.004 0.039 + 0.002 cavity diameter pitch position d p 0 e 1.50 0.10 4.00 0.10 1.75 0.10 0.060 0.004 0.157 0.004 0.069 0.004 perforation width thickness w t 1 8.00 0.30 8.00 0.10 0.254 0.02 0.315 0.012 0.315 0.004 0.010 0.0008 carrier tape cavity to perforation (width direction) cavity to perforation (length direction) f p 2 3.50 0.05 2.00 0.05 0.138 0.002 0.079 0.002 distance width tape thickness c t t 5.4 0.10 0.062 0.001 0.205 0.004 0.0025 0.0004 cover tape device orientation user feed direction cover tape carrier tape reel 8 mm 4 mm 37x 37x 37x 37x
for product information and a complete list of distributors, please go to our web site: www.avagotech.com avago, avago technologies, and the a logo are trademarks of avago technologies in the united states and other countries. data subject to change. copyright ? 2005-2011 avago technologies. all rights reserved. av02-2992en - september 29, 2011 reel dimensions C 7 inch ps 6 ps 6 back view ?178.00.5 ?55.00.5 6.25mm embossed letters lettering thickness: 1.6mm see detail "x" slot hole "b" slot hole(2x) 180 apart. slot hole "a": 3.00.5mm(1x) slot hole "b": 2.50.5mm(1x) ?13.0 65 45 r10.65 45 r5.2 embossed ribs raised: 0.25mm, width: 1.25mm 18.0* max. ?51.20.3 ?178.00.5 recycle logo front view 120 1.5 min. ?20.2 min. -0.2 +0.5 detail "x" -0.0 +1.5* 12.4 detail "y" (slot hole) 3.5 1.0 see detail "y" front back front back slot hole "a" ?178.00.5

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